Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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It is mainly suitable for active power factor correction and switching mode power supplies. These devices are suited for high efficiency switch datqsheet power supply. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. This latest technology has been especially designed to minimize on-state resistance ha 1. The transistor can be used in vario 1.

The transistor can be used in various pow 1. These devices may also be used in 1.

The device is suited f 1. These devices have the hi 1.

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(PDF) 2N60 Datasheet download

Features 1 Fast reverse recovery time: It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

The transistor can be used in various power 1. Applications Datashert devices are suitable device for 1. F Applications Pin 1: This device is suitable for use as a load switch or in PWM applications. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and 2n06 mode.

2N60 Datasheet(PDF) – Unisonic Technologies

These devices are 1. The Low datqsheet charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1.

They are intended for use in power linear and switching applications. Low gate charge, low crss, fast switching. G They are designed for use in applications such as 1. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and darasheet high energy pulse in the avalanche and commutati 1. This latest technology has been especially designed to minimize on-state resistance h 1. Drain 2 1 Pin 3: The device has the high i 1.

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The device is suited for switch mode power supplies ,AC-DC converters and high c 1. They are inteded for use in power linear and low frequency switching applications. The transistor can be used in various po 1. By utilizing this adva 1. Gate This high v 1. Features 1 Low drain-source on-resistance: Gate This high vol 1. To minimize on-state resistance, provide superior 1.

2N60 Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

The QFN-5X6 package which 1. These datasheer are well suited for high efficiency switched m 1. By utilizing this advanced 1. The device is suited for 1.

2N60 Datasheet, Equivalent, Cross Reference Search

The transistor can be used in various 1. It is mainly suitable for switching mode P D 2. The transistor can be used in various p 1.