BFY50 Transistor Datasheet pdf, BFY50 Equivalent. Parameters and Characteristics. BFY50 Datasheet, BFY50 NPN General Purpose Transistor Datasheet, buy BFY50 Transistor. BFY50 datasheet, BFY50 circuit, BFY50 data sheet: PHILIPS – NPN medium power transistors,alldatasheet, datasheet, Datasheet search site for Electronic.

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Philips Semiconductors Philippines Inc. General description NPN general-purpose transistors in small bfj50 packages. Description in a plastic package using TrenchMOS technology.

V SCA54 All rights are reserved. They are designed for high speed More information. BB Low-voltage variable capacitance double diode. Product specification Supersedes data of Sep Designed for general-purpose amplifier and low speed switching applications.

BFY50 NTE Equivalent NTE NPN audio transistor – Wholesale Electronics

This Datasheet is presented by the m anufacturer. TDA Light position controller. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Low voltage NPN power Darlington transistor. BZX series Voltage regulator diodes. They are designed for high speed. Low voltage PNP power transistor. To make this website work, we log user data and share it with processors. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.

NPN general-purpose transistors in small plastic packages. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7.

Suitable for applications requiring low noise and good h FE linearity, eg. Benefit is lower component count, internal compensation for temperature and current gain spread. Product data sheet Supersedes data of Apr Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.

Start display at page:. This data sheet contains final product specifications.

Philips Semiconductors, 6F, No. Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around the world. Quick reference data Rev. Product data sheet Supersedes data of Jan To use this website, you must agree to our Privacy Policyincluding cookie policy. We make every effort to understand the difficulties. Protection for Ethernet lines.

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Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. General description NPN general-purpose transistors.

NPN medium power transistor. Product data sheet Supersedes data of Oct Exposure to limiting values for extended periods may affect device reliability. All leads are isolated More information.

DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22

Product specification Supersedes data of Apr High oltage Switching Features: Stress above one or more of the limiting values may cause permanent damage to the device. Application information Where application information is given, it is advisory and does not form part of the specification. Designed for use in general purpose power bfg50 and switching applications.

High-speed switching No secondary breakdown. A linear amplifier 1.