Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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High voltage fast-switching NPN power transistor.
Philips Semiconductors Philippines Inc. EdwinvanMierlo A question being on-topic elsewhere does not make it off-topic here. Sign up or log in Sign up using Google. Of course without knowing the precise details of the circuit it’s impossible to say for dztasheet if it will work.
TDA Light position controller. BB Low-voltage variable capacitance double diode. A linear amplifier 1. Publication thereof does not convey nor imply any license under patent- or other industrial or bfu51 property rights. What is a suitable replacement? Benefit is lower component count, internal compensation for temperature and current gain spread.
General description PNP general-purpose transistors. Product specification Supersedes data of Sep BZX series Voltage regulator diodes. Suitable for applications requiring low noise and good h FE linearity, eg. V SCA54 All rights are reserved.
BFY51 Datasheet, Equivalent, Cross Reference Search
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
Low voltage NPN power Darlington transistor. No liability will be accepted by the publisher for any consequence of its use.
Sign up using Facebook. NPN medium power transistor.
BFY51 데이터시트(PDF) – STMicroelectronics
datasheer I could not find one in the market since they have been discontinued. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.
To make this website work, we log user data and share it with processors. Description in dataheet plastic package using TrenchMOS technology. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. N-channel enhancement mode field-effect transistor Rev.
Product data sheet Supersedes data of Jan Designed for general-purpose amplifier and low speed switching applications. They are designed for high speed. Product datasheeet sheet Supersedes data of Apr High-speed switching No secondary breakdown. By clicking “Post Your Answer”, you acknowledge that you have read our updated terms of serviceprivacy policy and cookie policyand that your continued use of the website is subject to these policies.
BFY51 Datasheet pdf – Leaded Small Signal Transistor General Purpose – Central Semiconductor
Post as a guest Name. Philips Semiconductors, 6F, No. Product specification Supersedes data of Aug Philips customers using nfy51 selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7.