The Producer Eterna flowable CVD (FCVD) tool provides a bottoms up, void-free fill in memory and logic designs at nm and below. Low k C-doped oxide (kflowable chemical vapor deposition (FCVD) reactor for W inter-metallic dielectrics (TMD). Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD. Oxide for Shallow Trench Isolation of finFET Integration. J. Li1, J. Bruley2.
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Exemplary branched alkyl groups include, but are not limited to, isopropyl, isobutyl, sec-butyl, tert-butyl, iso-pentyl, tert-pentyl, isohexyl, and neohexyl. In liquid delivery formulations, the precursors described herein may be delivered in neat liquid form, or alternatively, may be employed in solvent formulations or compositions comprising same.
Flowable CVD Process Application for Gap Fill at Advanced Technology
For those embodiments relating to a composition comprising a solvent s ccvd at least one silicon-containing compound described herein, the solvent or mixture thereof selected does not react with the silicon compound. The defect reduction of via opens by the integration of inter-metal-dielectric film, metal hard mask, and all-in-one etch processes. Scientific Data Management Research Staff. In one particular embodiment, the plasma is selected from but not limited to the group consisting of a nitrogen plasma; flowablr comprising nitrogen and helium; a plasma comprising nitrogen and argon; an ammonia plasma; a plasma comprising ammonia and helium; a plasma comprising ammonia and argon; helium plasma; argon plasma; hydrogen plasma; a plasma comprising hydrogen and helium; a plasma comprising hydrogen and argon; a plasma comprising ammonia and hydrogen; an organic amine plasma; a plasma comprising oxygen; a plasma comprising oxygen and hydrogen, and mixtures thereof.
The TSA reacts with the plasma activated ammonia and begins to oligomerize to form higher molecular weight TSA dimers and trimers or other species which contain Si, N and H.
Flowable CVD Process Application for Gap Fill at Advanced – Technische Informationsbibliothek (TIB)
The compositions or formulations described herein and methods using same overcome the problems of the prior art by depositing a silicon-containing film on at least a portion of the substrate surface that provides desirable film properties upon post-deposition treatment. The method of claim 1 wherein the plasma is selected from the group consisting of an in-situ floqable remote plasma source based plasma comprising carbon or hydrocarbon, an in-situ or remote plasma source based plasma comprising hydrocarbon and helium, an in-situ or remote plasma source based plasma comprising hydrocarbon and argon, an in-situ or remote plasma source based plasma comprising carbon dioxide, an in-situ or remote plasma source based plasma comprising carbon monoxide, an in-situ or remote plasma source based plasma comprising a hydrocarbon and hydrogen, an in-situ or remote plasma source based plasma comprising a hydrocarbon and nitrogen, an in-situ or remote plasma source based plasma comprising hydrocarbon and oxygen, and mixture thereof.
Flowablw comprising the instant precursor compounds are substantially free of such decomposition products.
Adsorbents such as, for example, commercially available Fliwable 2 O 3 blends can be used to remove halides such as chloride. All density measurements were accomplished using X-ray reflectivity XRR. Exemplary substituents include, but are not limited to, oxygen, sulfur, halogen atoms e. Tips for Longer Dressing Life. Because of the SiN bond distance and angles, it is known that as SiN is oxidized to SiO 2 there is a unit cell volume increase which prevents the film from shrinking.
The method of claim 1 wherein flowale acyloxysilane having the Formula I a is selected from the group consisting of: In some embodiments, the substrate may be a single crystal silicon wafer, a wafer of silicon carbide, a wafer of aluminum oxide sapphirea sheet of glass, a metallic foil, an organic polymer film or may be a polymeric, glass, silicon or metallic 3-dimensional article.
In certain embodiments, the reactor is at a pressure below atmospheric pressure or torr 10 5 Pascals Pa or less, or torr Pa or less. Search Expert Search Quick Search.
Examples of compounds of Formula I a include diacetoxydimethylsilane, diacetoxymethylsilane, triacetoxymethylsilane, diacetoxydivinylsilane, diacetoxymethylvinylsilane, triacetoxyvinylsilane, diacetoxydiethynylsilane, diacetoxymehylethynylsilane, and triacetoxyethynylsilane. Substrates may further comprise a cvr of layers to which the film is applied thereto such as, for example, antireflective coatings, photoresists, organic polymers, porous organic and inorganic materials, metals such as copper and aluminum, or diffusion barrier layers, e.
H thin films in electron cyclotron resonance H 2 -Ar-SiH 4 plasma. In one embodiment, a liquid cvs system may be utilized. The surface may also have on flowanle a photoresist material that has been exposed with a pattern and developed to partially coat the substrate. In this work, we report the application of flowable chemical vapor deposition FCVD technology in subnm devices and flash devices.
As previously mentioned, the method deposits a film upon at least a portion of the surface of a substrate flowwble a surface feature. In addition, the aforementioned reagents should be substantially free of chloride impurities such that the resulting crude product is substantially free of chloride impurities. Exemplary linear alkyl groups include, but are not limited to, methyl, ethyl, propyl, butyl, pentyl, and hexyl groups. Such films are not suitable for low-k film applications.
SUMMARY The compositions or formulations described herein and methods using same overcome the problems of the prior art by depositing a silicon-containing film on at least a portion of the substrate surface that provides desirable film properties upon post-deposition flowablee.
Such energy can be provided by, but not limited to, thermal, plasma, pulsed plasma, helicon plasma, high density plasma, inductively coupled plasma, X-ray, e-beam, photon, remote plasma methods, and combinations thereof.
In this or other embodiments, the aspect ratio the depth to width ratio of floawble surface features, if present, is 0. The flowability and gap fill effects on patterned flowablw were observed by a cross-sectional Scanning Electron Microscopy SEM using a Hitachi S system at a resolution of 2.
Formation of High-oriented Epitaxial Ni Si 0. In one embodiment of the invention, a composition comprises the inventive silicon containing precursor and at least one of the oxygen or nitrogen containing source. The flowable film is formed by reacting a dielectric precursor which may have a Si—C bond with an oxidant to form the dielectric material. While the principles of the invention have been described above in connection with preferred embodiments, it is to be clearly understood that this description is made only by way of example and not as a limitation of the scope of the invention.
Click for automatic bibliography generation. The precursor of claim 12 further comprising at least one oligomer of at least one of the silicon containing compounds.