Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

| Author: | Vobar Kajirr |
| Country: | Andorra |
| Language: | English (Spanish) |
| Genre: | Travel |
| Published (Last): | 22 February 2011 |
| Pages: | 253 |
| PDF File Size: | 8.31 Mb |
| ePub File Size: | 14.99 Mb |
| ISBN: | 195-6-60641-671-7 |
| Downloads: | 38512 |
| Price: | Free* [*Free Regsitration Required] |
| Uploader: | Tugal |
Prev Next General features. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8.
The TOAB package is universally preferred for all. These packages have a Lead-free second level interconnect. Elcodis is a trademark of Elcodis Company Ltd. Electrical characteristics Figure Safe operating area for TO Figure 3.
Pulsed Drain Current a. Gate charge vs gate-source fatasheet Figure Capacitance variations Figure IRF datasheet and specification datasheet.
Continuous Source-Drain Diode Current. View PDF for Mobile. Vishay Intertechnology Electronic Components Datasheet.
IRF630 MOSFET. Datasheet pdf. Equivalent
Contents Contents 1 Electrical ratings. The low thermal resistance. Gate charge test circuit Figure Operating Junction and Storage Temperature Range.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Pulse width limited by safe operating area 2. Static drain-source on resistance Figure The low thermal dafasheet and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Pulsed Diode Forward Current a. N-channel V – 0. Unclamped inductive waveform Figure Repetitive Avalanche Current a.
Test circuit for inductive load switching and diode recovery times Figure Copy your embed code and datazheet on your site: IRF datasheet and specification datasheet Download datasheet.
IRF NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics
Drain-Source Body Diode Characteristics. Single Pulse Avalanche Energy b. V DS Temperature Coefficient. The maximum ratings related to soldering conditions are also marked on the inner box label. Download datasheet Kb Share this page. All other trademarks are the property of their respective owners.
Repetitive rating; pulse width limited by maximum junction temperature see fig. Switching times test circuit for resistive load Figure Thermal impedance for TO Figure 4. This datasheet is subject to change without notice.
Body Diode Reverse Recovery Time.
